Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.

Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

Performance Enhancement of CMOS Microbolometer with Metal-Insulator-Metal Absorbers

Responsivity Enhancement of CMOS Microbolometer with Two-Dimensional Al Grating

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Performance Enhance of CMOS-MEMS Thermoelectric Infrared Sensor by Using Sensing Material and Structure Design

Optical Optimization and Simulation of Micro-bolometers Based on Α-Si:H Thin Film

Study on new structure uncooled a-Si microbolometer for infrared detection

High-performance microbolometers with metal-insulator-metal plasmonic absorbers in CMOS technology

Optical Property Analysis of Microbolometer Based on MEMS

Diode-based Microbolometer with Performance Enhanced by Broadband Metamaterial Absorber.

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Advanced design of microbolometers for uncooled infrared detectors