Responsivity Enhancement of CMOS Microbolometer with Two-Dimensional Al Grating

Hao-Lan Ma,Yao-Zu Guo,Sheng Xu,Wei Zhu,Xiao-Li Ji
DOI: https://doi.org/10.1109/icsict55466.2022.9963240
2022-01-01
Abstract:In this paper, 2D Al grating structure were designed on the Silicon microbolometer for the responsivity enhancement. The Al connection layer in the standard CMOS process is designed as a grating structure and integrated with Silicon microbolometer. The grating changes the electric field distribution to improve infrared absorptivity of the microbolometer. The FDTD simulation results show that the 2D Al grating can improve the absorptivity of the microbolometer at the wavelength of 7-13 μm and the average increased percentage is 29.26%. The experimental results show that the responsivity of the detector integrated with the 2D Al grating structure can be significantly improved. The enhancement of the responsivity can reach the maximum of 20.49% and 20.50 at 8.33 μm and 12.20 μm, respectively.
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