Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Study on new structure uncooled a-Si microbolometer for infrared detection

A Uncooled A-Si Infrared Detector with Novel Thermal Isolation Method.

A Uncooled Α-Si Infrared Detector Using Polyimide As Thermal Isolation Layer

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection

Optimization Design of Uncooled Amorphous Silicon Thin Film Transistor Infrared Detector

Freestanding A-Si Thin Film Transistor for Room-Temperature Infrared Detection

Thermal Behavior of Amorphous Silicon Thin Film Transistor and Its Application to Micromachined Uncooled Infrared Sensors

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Design and Fabrication of Single-Chip A-Si TFT-based Uncooled Infrared Sensors

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

Novel Micromachined Uncooled Infrared Detector Employing A-Si:H TFT As Thermosensitive Element

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Fabrication and Characterization of Integrated Uncooled Infrared Sensor Arrays Using A-Si Thin-Film Transistors As Active Elements

A High Linearity Readout Integrated Circuit for Uncooled IR Detector

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology