Abstract:In this study, the doping of deep‐level element sulfur (S) is synergized with the device architecture incorporating a blocked impurity band (BIB) to fabricate an advanced infrared detector. The S‐doped Si (Si:S) BIB detector exhibited excellent short‐wave infrared detection performance. The multi‐scenario application demonstrations further confirmed its potential for practical use. Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 μm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped Si‐based infrared photodetector featuring a blocked impurity band (BIB) structure is investigated. The detector achieves an extended sub‐bandgap infrared response up to 2 μm through impurity band transitions, facilitated by the artificial creation of a deep‐level impurity band within the Si bandgap. The device exhibited a competitive photodetection effect with a high responsivity of 107.3 mA W−1 and an external quantum efficiency of 10.2%. Notably, the detector yielded an enhanced response speed with a raising time of 46 μs and a decay time of 135 μs at 1310 nm under room temperature. Finally, the versatile applications of this detector is presented in a multitude of scenarios encompassing material composition identification, multi‐band imaging, and optical communication. The proposed investigation not only proposed a method for Si‐based infrared detectors but also constituted a contribution to the advancement of silicon photonics.

Freestanding A-Si Thin Film Transistor for Room-Temperature Infrared Detection

Design and Fabrication of Single-Chip A-Si TFT-based Uncooled Infrared Sensors

Thermal Behavior of Amorphous Silicon Thin Film Transistor and Its Application to Micromachined Uncooled Infrared Sensors

Fabrication and Characterization of Integrated Uncooled Infrared Sensor Arrays Using A-Si Thin-Film Transistors As Active Elements

Novel Micromachined Uncooled Infrared Detector Employing A-Si:H TFT As Thermosensitive Element

A Uncooled A-Si Infrared Detector with Novel Thermal Isolation Method.

A Single Device Temperature Sensor Based on Amorphous Silicon Thin Film Transistor

A Uncooled Α-Si Infrared Detector Using Polyimide As Thermal Isolation Layer

Study on new structure uncooled a-Si microbolometer for infrared detection

An Uncooled Microcantilever IR Detector Based on Bulk Silicon Technique

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Optimization Design of Uncooled Amorphous Silicon Thin Film Transistor Infrared Detector

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

An uncooled optically readable infrared imaging detector

Sensing Infrared Photons at Room Temperature: from Bulk Materials to Atomic Layers

Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranes

High Sensitivity of Room-Temperature Terahertz Photodetector Based on Silicon.

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Monolithic Dielectric BST Infrared Sensor Arrays Using a Novel Silicon-Ferroelectric Integration Scheme Based on Improved Porous Silicon Micromachining

Room temperature Si:S barrier infrared detector with broadband response up to 4.4μm

Dual-Gate Photosensitive A-Si:H Thin-Film Transistor with a $\pi $ -Shape Channel for Large-Area Imaging and Sensing