The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Yao-Zu Guo,Hao-Lan Ma,Sheng Xu,Wei Zhu,Xiao-Li Ji
DOI: https://doi.org/10.1109/icsict55466.2022.9963299
2022-01-01
Abstract:The microstructure enhanced infrared absorptivity of microbolometer based standard CMOS technology cannot satisfy the enhancement effect of wide spectrum. In this paper, the Si 3 N 4 is deposited on the absorber of microbolometer with Al grating to enlarge the absorptivity band to 13 μm. The simulated results show that the optimal thickness of Si 3 N 4 deposition is 200 nm and the average absorptivity can be increased by 75.6% at the wavelength range of 10 to 13 μm. The experimental results show that the maximum of detectivity is 2.32×10 9 cmHz 1/2 /W after depositing 200 nm Si 3 N 4 and the average increased percentage is 77.97% at wavelengths of 10 μm to 13 μm, which is very close to the simulated result of 75.6%.
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