Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Diode-based Microbolometer with Performance Enhanced by Broadband Metamaterial Absorber.

Performance Enhancement of CMOS Microbolometer with Metal-Insulator-Metal Absorbers

Wavelength and Thermal Distribution Selectable Microbolometers Based on Metamaterial Absorbers

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

Design of an Ultrabroadband Visible Metamaterial Absorber Based on Three-Dimensional Metallic Nanostructures

Polarization-insensitive wide-angle multiband metamaterial absorber with a double-layer modified electric ring resonator array

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

Performance Enhancement of Uncooled Infrared Focal Plane Array by Integrating Metamaterial Absorber

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Magnetic Medium Broadband Metamaterial Absorber Based on the Coupling Resonance Mechanism

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Responsivity Enhancement of CMOS Microbolometer with Two-Dimensional Al Grating

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology

Advanced design of microbolometers for uncooled infrared detectors

Mid-infrared bimodal wide metamaterial absorber based on double-layer silicon nitride structure

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

An Ultra-Wideband, Wide-Angle and Transparent Microwave Absorber Using Indium Tin Oxide Conductive Films