Abstract:Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (Rλ ), detectivity (D*), and response time (tr ). The research in this field has been driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to bridge the performance gap between cooled photon detectors and uncooled bolometers. This study focuses on the optoelectronic and bolometric characteristics of CuFeSe2 nanocrystals (NCs) in a colloidal solution. These NCs exhibit a significant change in resistivity (ρ) when subjected to temperature variations ranging from 170K to 400K. Specifically, the Temperature Coefficient of Resistance (TCR), α, is 1.9% per Kelvin for a room temperature resistivity of 505 Ω cm. Furthermore, the responsivity of CuFeSe2 NCs is reported to be 0.101 A/W, and the Hall mobility of the colloidal solution is determined as 0.1cm2/V/s . Finally, a comprehensive comparison is conducted between the performance metrics of established bolometer materials, such as VOx and a‐Si, and those of colloidal CuFeSe2 NCs. Based on the results, colloidal CuFeSe2 NCs are a promising option for future bolometer technology.This article is protected by copyright. All rights reserved.

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