Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

ADVANCEMENTS IN UNCOOLED BOLOMETER TECHNOLOGY: SHORT‐WAVE INFRARED DETECTION VIA CuFeSe2 NANOCRYSTAL COLLOIDAL THIN‐FILMS

Visible and Near-Infrared, Multiparametric, Ultrasensitive Nanothermometer Based on Dual-Emission Colloidal Quantum Dots

Nano-thermoelectric infrared bolometers

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Optically induced quantum transitions in direct probed mesoscopic NbSe2 for prototypical bolometers

Single MoS2-flake as a high TCR non-cryogenic bolometer

Ternary FePSe3 Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

Investigating thermal properties of 2D non-layered material using a NEMS-based 2-DOF approach towards ultrahigh-performance bolometer

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Ternary FePSe 3 Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Photodetectors: Bolometric Effect in Bi2O2Se Photodetectors (Small 43/2019)

Metal-carbon nanotube composite for wavelength-selective bolometer with improved characteristics

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Infrared Micro-Detectors with High Sensitivity and High Response Speed Using VO2-coated Helical Carbon Nanocoils

Thin Film Like Terahertz Bolometric Detector on Bi2212 Single Crystal

A 0.6 THz quasi-optical detector based on a room microbolometer

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Fundamental limits of few-layer NbSe$_2$ microbolometers at terahertz frequencies

CuFeSe2 Quantum-Dot Based Infrared Photodetectors with Functionality in the Ambient

Germanium nanowire microbolometer