Sub-10mK-Resolution Thermal-Bolometric Integrated FET-Type Sensors Based on Layered Bi<sub>2</sub>O<sub>2</sub>Se Semiconductor Nanosheets

Qifeng Cai,Shuo Liu,Minzhi Du,Lei Xu,Chunyan Zhao,Congwei Tan,Teng Tu,Kun Zhang,Hailin Pcng,Xing Zhang,Ming Li,Ming He,Ru Huang
DOI: https://doi.org/10.1109/IEDM13553.2020.9371896
2020-01-01
Abstract:In this work, we reported high-sensitivity thermal-bolometric integrated transistor sensors based on the layered Bi2O2Se nanosheets for the first time, wherein the temperature-promoted ionization of selenium vacancies and the ultrahigh in-plane electron mobility were demonstrated to yield a record-high temperature resolution of 1.5 mK. And the integrated sensors simultaneously detected the thermal, photoconductive, and bolometric stimuli with outstanding performances including the temperature sensitivity of 4.6 %K-1, the bolometric coefficient of 41.8 mu A/K, the bolometric response of >3300 A/W, and the working range of 30-200 degrees C. Furthermore, the stochastic resonance decoupling model was proposed to extract the coupled signals by amplifying signals through the coherent energy transferring from the imbedded noises.
What problem does this paper attempt to address?