TexSe1–x Photodiode Shortwave Infrared Detection and Imaging
Liuchong Fu,Yuming He,Jiajia Zheng,Yuxuan Hu,Jiayou Xue,Sen Li,Ciyu Ge,Xuke Yang,Meng Peng,Kanghua Li,Xiangbin Zeng,Jinchao Wei,Ding‐jiang Xue,Haisheng Song,Chao Chen,Jiang Tang
DOI: https://doi.org/10.1002/adma.202211522
IF: 29.4
2023-03-29
Advanced Materials
Abstract:Short‐wave infrared detectors are playing an increasingly important role in the fields of autonomous driving, food safety, disease diagnosis and scientific research. However, the mature short‐wave infrared camera such as InGaAs has the disadvantage of complexly heterogeneous integration with complementary metal‐oxide‐semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, we report a low‐cost, high‐performance, and high‐stability TexSe1–x short‐wave infrared photodiode detector. The TexSe1–x thin film is fabricated through CMOS‐compatible low‐temperature evaporation and post‐annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad‐spectrum response of 300–1600 nm, a room‐temperature specific detectivity of 1.0 × 1010 Jones, a –3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te‐based photodiode devices and a dark current density 7 orders of magnitude smaller than Te‐based photoconductive and field‐effect transistor devices. With a simple Si3N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized TexSe1–x photodiode detector, we demonstrate the applications in material identification and masking imaging. Our work paves a new way for CMOS‐compatible infrared imaging chips. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology