Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ming Yang,Qi Han,Xianchao Liu,Jiayue Han,Yafei Zhao,Liang He,Jun Gou,Zhiming Wu,Xinran Wang,Jun Wang

DOI: https://doi.org/10.1002/adfm.201909659

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:Infrared (IR) detection at 1300-1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi2Se3 is considered a promising candidate toward high-performance IR applications. Nevertheless, the IR devices based on Bi2Se3 thin films are rarely reported. Here, a 3D TI Bi2Se3/MoO3 thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (R-i), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405-1550 nm). The highest on-off ratio of the optimized device can reach up to 5.32 x 10(4). R-i, D*, and the EQE can reach 1.6 x 10(4) A W-1, 5.79 x 10(11) cm(2) Hz(1/2) W-1, and 4.9 x 10(4)% (@ 405 nm), respectively. Surprisingly, the R-i can achieve 2.61 x 10(3) A W-1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 mu s), which is two orders of magnitude faster than that of other TIs-based devices. In addition, the device demonstrates brilliant long-term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high-performance photodetectors in the optical communication, military, and imaging fields.