Wafer‐Scale Fabrication of Broadband Sb2Se3 Photodetectors and their Multifunctional Optoelectronic Applications

Yuhang Ma,Zexiang Deng,Huanrong Liang,Xinyi Guan,Zhaoqiang Zheng,Jiandong Yao,Guowei Yang

DOI: https://doi.org/10.1002/lpor.202400669

2024-08-07

LASER & PHOTONICS REVIEWS

Abstract:Large‐area Sb2Se3 nanofilms are successfully synthesized via pulsed‐laser deposition, and arrayed photodetectors are produced. The devices exhibit broadband photoresponse from UV to NIR. By using the Sb2Se3 photodetectors as sensing components, broadband imaging and fitness monitoring applications are realized. This study provides a promising route for the scalable preparation of low‐dimensional van der Waals material photodetectors. Low‐dimensional van der Waals materials (vdWMs) have attracted worldwide interest on account of numerous advantages including self‐passivated surface, high carrier mobility, excellent flexibility, etc. Among multiple vdWMs, Sb2Se3 stands out due to its high light absorption coefficient, environmentally friendly components, excellent stability, and abundant reserve. However, limited effective wavelength range and unscalable preparation have been obstinate issues standing in the way of further development. Herein, pulsed‐laser deposition (PLD) has been developed for synthesizing Sb2Se3 nanofilms, and wafer‐scale deposition has been realized. The PLD‐derived Sb2Se3 photodetector demonstrates broadband photoresponse across UV to NIR. First‐principles calculations have determined that this is because the formation of Se vacancies can result in a reduction of the bandgap. Upon 635 nm illumination, an optimal responsivity of 2.68 A W−1 has been achieved, corresponding to an external quantum efficiency of 524% and a specific detectivity of 1.34 × 1012 Jones. Furthermore, the device manifests a short response/recovery time of ≈2/1 ms. Proof‐of‐concept broadband imaging as well as fitness monitoring (respiratory rate & heart rate) have been realized. Profited from the scalable preparation, an array of Sb2Se3 photodetectors have been produced, exhibiting qualified device‐to‐device variation. On the whole, this study has depicted an attractive landscape for next‐generation integrated optoelectronics.