Vanadium Oxide Thermal Sensitive Thin Film with TiN Absorbing Layer for Uncooled Infrared Bolometer

Bin Wang,Ning Li,Wan-Feng Xie,Jian-Jun Lai,Shu-Ying Wang,Yu Zheng,Zong-Tao Chi,Bing Yu,You-Qing Shen,Hai-Lin Cong
DOI: https://doi.org/10.1080/10584587.2021.1911256
2021-01-01
Integrated Ferroelectrics
Abstract:Multilayers' absorption DMDM structure of SiO2/TiN (x) /SiO2/VO (x) structure for 8-14 infrared wavelengths is proposed and simulated. Between mid-infrared 8 mu m and 14 mu m wavelengths, infrared detector with this structure and thermal sensitive VO (x) of -7%/K TCR, which exhibits high infrared absorption about average 83%, has been fabricated and tested successfully.
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