Abstract:This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. It was found that different kinds of stress had different influence mechanisms on the device. Namely, excessive mechanical pressure/deformation stress caused serious, irrecoverable degradation of the device's leakage current, with the gate leakage current (Ig) increasing by ~107 times and the drain-to-source leakage current (Idss) increasing by ~106 times after mechanical punctate deformation of 0.5 mm. The device characteristics were not restored after the mechanical stress was removed. Compared with three mechanical stresses, environmental thermal stress had a greater influence on the device's transfer characteristic and on-resistance (Ron) but far less influence on Ig and Idss. As was expected, multiple stress coupled to the device promoted invalidation of the device. For more in-depth investigation, finite element simulation carried out with COMSOL was used to analyze the effect of electro-thermo-mechanical coupling stress on top-cooled E-mode AlGaN/GaN HEMT. The results of the experiments and simulation demonstrated that single and coupled stresses, especially mechanical stress coupled with other stresses, degraded the electrical properties or even caused irreversible damage to top-cooled E-mode AlGaN/GaN HEMT. Mechanical stress should be reduced as much as possible in the packaging design, transportation, storage, and application of top-cooled E-mode AlGaN/GaN HEMT.

Different High-Electric-Field-Stress-Induced Degradation of SiN Passivated AlGaN/GaN HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Stress Reliability Study of GaN HEMT Devices

Effects of SiNxon Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN High Electron Mobility Transistors

Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body