Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Isotopic effect between hydrogen and deuterium emission in silicon

Enhanced Stability of Deuterium in Silicon

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

Evidence for Energy Coupling from the Si–D Vibration Mode to the Si–Si and Si–O Vibration Modes at the SiO2/Si Interface

Direct Evidence of Multiple Vibrational Excitation for the Si–H/D Bond Breaking in Metal–oxide–semiconductor Transistors

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Effect of Atomic Hydrogen on Boron-Doped Germanium: an Ab Initio Study

Role of Holes in the Isotope Effect and Mechanisms for the Metal–oxide–semiconductor Device Degradation

Phonon-energy-coupling Enhancement: Strengthening the Chemical Bonds of the SiO2∕Si System

Mechanisms for Metastability in Hydrogenated Amorphous Silicon

Mechanisms of Metastability in Hydrogenated Amorphous Silicon

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Effect of hydrogen on ground state structures of small silicon clusters

Dynamics of hydrogen in silicon at finite temperatures from first-principles

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Deuterium Trapping in the Carbon-Silicon Co-Deposition Layers Prepared by RF Sputtering in D 2 Atmosphere

Interactions of atomic hydrogen with amorphous SiO 2

Counterintuitive effects of isotopic doping on the phase diagram of H<sub>2</sub>-HD-D<sub>2</sub> molecular alloy

Deuterium Isotope Effect for AC and DC Hot-Carrier Degradation of MOS Transistors: a Comparison Study

High-resolution Spectroscopy of Ν3 and Ν1 + Ν3 Bands of SiD4