Abstract:Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few decades, no other industry has seen growth even comparably close to that experienced by the semiconductors industry. This has all been made possible by the unbroken string of ingenious breakthroughs by brilliant minds that have been working tirelessly to shrink down transistors. The latest of which is the use of high-k dielectrics and a return to metal gates combined with 3D-transistor architectures. This has been the enabling technology for the transition from the 90 nm node to the 45 nm node, allowing us to shrink our transistors further without losing additional gate control. The fundamental reason for using a high-k gate dielectric compared to SiO2 is that shrinking our gate oxide further, which is already at a few angstroms, is no longer a feasible option to gain additional gate control. High-k dielectric overcome this by exploiting the fundamental physics of capacitors and the materials science of dielectrics to provide a viable option to increase gate control without the need for successively thinner gate oxides. Hafnium Oxide is the most studied and popular of such materials. Its high dielectric constant ~16-25 and interface stability with silicon at operating temperatures make it an ideal candidate for use in current CMOS technology. Despite its deceivingly simple appearance, the processes involved in the fabrication of such high-k HfO2/Si interfaces are full of process subtleties and nuances. In this term paper we hope to explore the physics and materials science of these high-k HfO2/Si interfaces, discussing the challenges and ways to overcome them when it comes to its actual fabrication, and how this ultimately affects our device performance.

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Electronically Induced Defect Creation at Semiconductor/oxide Interface Revealed by Time-Dependent Density Functional Theory

Direct Evidence of Multiple Vibrational Excitation for the Si–H/D Bond Breaking in Metal–oxide–semiconductor Transistors

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO$_2$ interfaces

Deuterium Pressure Dependence of Characteristics and Hot-Carrier Reliability of CMOS Devices

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Oxide Or Metal Interface Damage Improvement Of Deep Silicon Etch Process By Low Power Rf Of Low Frequency

An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes?

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Evidence for Energy Coupling from the Si–D Vibration Mode to the Si–Si and Si–O Vibration Modes at the SiO2/Si Interface

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Unravelling the silicon-silicon dioxide interface under different operating conditions

Interface degradation in Si‐metal‐oxide‐semiconductor structures by homogeneous, microwave heating of channel carriers

Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

Electron energy dependence of metal-oxide-semiconductor degradation

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens

Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon