Abstract:HfO2 is one of the alternative candidate gate materials for SiO2 in electronic devices, because of its high dielectric constant (ε ≈ 25). Space charges and defects are more favorable to be accumulated at the oxide-substrate interface, which plays a key role in the electrical properties of electronic devices. However, it is still unclear that how the defects affect the electrical performance of devices. In this paper, the effect of oxygen vacancy (Vo) on the electronic structure of the HfO2/Si interface and electrical properties of devices was analyzed by using the density functional theory. The 2-layer model of HfO2/Si was built, and then the Vo was introduced into the interface through first-principles calculation method. The interfacial electronic levels, states, and localization functions of these two models were calculated with the assistance of Quantum Espresso software. It was found that the interaction between atoms such as Si-O and Hf-O at HfO2/Si interface is weaker than that in the SiO2 and HfO2, respectively. It means that the point defects are easy to be formed at the HfO2/Si interface. The interfacial state is originated from Si and Hf atoms, which is quite different from the bulk state and responsible to the electrical performance of devices. Compare with Hf, the Si near VO processes greater electron affinity and thus has more ability to capture electrons, leading to the electrostatic breakdown eventually. Our research work revealed the reason why the interfacial states were formed and the physical mechanism of the effect of interfacial states on the electrical properties of the device from the electronic level. It is expected that these results can be benefited to the structural design and performance optimization for electronic devices.

Evidence for Energy Coupling from the Si–D Vibration Mode to the Si–Si and Si–O Vibration Modes at the SiO2/Si Interface

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Direct Evidence of Multiple Vibrational Excitation for the Si–H/D Bond Breaking in Metal–oxide–semiconductor Transistors

Phonon-energy-coupling Enhancement: Strengthening the Chemical Bonds of the SiO2∕Si System

Isotopic effect between hydrogen and deuterium emission in silicon

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Si and O Self-Diffusion in Hydrous Forsterite and Iron-Bearing Olivine from the Perspective of Defect Chemistry

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Evidence Of Enhanced Phonon-Energy Coupling In Sio2/Sin

Enhanced Stability of Deuterium in Silicon

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Thermal-mechanical Coupling Effect on Initial Stage Oxidation of Si(100) Surface

Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Probing lattice vibration at surface and interface of SiO$_2$/Si with nanometer resolution.

The Evidence for Interaction of the N-N Pair with Oxygen in Czochralski Silicon

Phonon-Energy-Coupling Enhancement: Dramatic Improvement of the Reliability of Silicon MOS Transistors

Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface

Dangling bond defects on Si surfaces and their consequences on energy band diagrams: from a photoelectrochemical perspective

A New Physics Effect, Phonon-Energy-Coupling Enhancement, and Its Applications for Leakage Current Reduction of Gate Dielectrics