Abstract:Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete $\mathrm{Si}/\mathrm{Si}{\mathrm{O}}_{2}$ interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a ``Si-H\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}H-O'' complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}\ifmmode\cdot\else\textperiodcentered\fi{}H-O complex will be the center for defect creation and device degradation. We also explain why such a center might be relatively easy to form during the hydrogen annealing process.

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

Evidence for Energy Coupling from the Si–D Vibration Mode to the Si–Si and Si–O Vibration Modes at the SiO2/Si Interface

Isotopic effect between hydrogen and deuterium emission in silicon

Direct Evidence of Multiple Vibrational Excitation for the Si–H/D Bond Breaking in Metal–oxide–semiconductor Transistors

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Enhanced Stability of Deuterium in Silicon

Role of Holes in the Isotope Effect and Mechanisms for the Metal–oxide–semiconductor Device Degradation

An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes?

Deuterium Isotope Effect for AC and DC Hot-Carrier Degradation of MOS Transistors: a Comparison Study

Electronically Induced Defect Creation at Semiconductor/oxide Interface Revealed by Time-Dependent Density Functional Theory

Deuterium process of CMOS devices: new phenomena and dramatic improvement

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO$_2$ interfaces

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Deuterium Pressure Dependence of Characteristics and Hot-Carrier Reliability of CMOS Devices

Interactions of atomic hydrogen with amorphous SiO 2

Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

Phonon-energy-coupling Enhancement: Strengthening the Chemical Bonds of the SiO2∕Si System

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Mechanisms for Metastability in Hydrogenated Amorphous Silicon