Abstract:The study of the desorption of hydrogen (H) and deuterium (D) on silicon in ultra high vacuum (UHV) by scanning tunneling microscopy (STM) led to the discovery of the giant H/D isotope effect. It was later used in passivation of the SiO/sub 2//Si interface, leading to large improvement of the hot-carrier lifetime of MOS transistors (J.W. Lyding et al, Appl. Phys. Lett., vol. 68, p. 2526, 1996). It is known that desorption mechanisms for the Si-H/D bonds by STM are multiple vibrational excitation at low voltage (T.-C. Shen et al, Science vol. 268, p. 1590, 1995). However, the chemical environment of the SiO/sub 2//Si interface in MOS devices is very different from that of Si in UHV, because in MOS transistors, electrons not only directly excite the Si-H/D bonds, but also are injected into the oxide. Recently, we showed that electrons that are injected into the oxide may not break Si-H/D bonds and only electrons that remain in the channel (and do not overcome the oxide/Si barrier) break the Si-H/D bonds (Z. Chen et al, IEEE Electron Dev. Lett. vol. 21, p. 24, 2000). Although it was suggested that the mechanisms for breakage of Si-H/D bonds in MOS transistors should be analogous to the explanation for the STM experiments, there is no direct experimental evidence to support the suggestion. In this paper, we present experimental results to show that the quantitative H/D isotope effect is dependent on the channel current density, which support the multiple vibrational excitation mechanisms.

Deuterium process of CMOS devices: new phenomena and dramatic improvement

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Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Deuterium Isotope Effect for AC and DC Hot-Carrier Degradation of MOS Transistors: a Comparison Study

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology

Enhanced Stability of Deuterium in Silicon

Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

Lowering of Schottky Barrier Height in a Vertical Pillar MOSFET by Deuterium Annealing

Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials

Germanium doping for improved silicon substrates and devices

Phonon-Energy-Coupling Enhancement: Dramatic Improvement of the Reliability of Silicon MOS Transistors

Atmospheric Degradation and Performance Recovery of <scp>Two‐Dimensional MoS<sub>2</sub></scp> Field Effect Transistor<sup>†</sup>