Abstract:The study of the desorption of hydrogen (H) and deuterium (D) on silicon in ultra high vacuum (UHV) by scanning tunneling microscopy (STM) led to the discovery of the giant H/D isotope effect. It was later used in passivation of the SiO/sub 2//Si interface, leading to large improvement of the hot-carrier lifetime of MOS transistors (J.W. Lyding et al, Appl. Phys. Lett., vol. 68, p. 2526, 1996). It is known that desorption mechanisms for the Si-H/D bonds by STM are multiple vibrational excitation at low voltage (T.-C. Shen et al, Science vol. 268, p. 1590, 1995). However, the chemical environment of the SiO/sub 2//Si interface in MOS devices is very different from that of Si in UHV, because in MOS transistors, electrons not only directly excite the Si-H/D bonds, but also are injected into the oxide. Recently, we showed that electrons that are injected into the oxide may not break Si-H/D bonds and only electrons that remain in the channel (and do not overcome the oxide/Si barrier) break the Si-H/D bonds (Z. Chen et al, IEEE Electron Dev. Lett. vol. 21, p. 24, 2000). Although it was suggested that the mechanisms for breakage of Si-H/D bonds in MOS transistors should be analogous to the explanation for the STM experiments, there is no direct experimental evidence to support the suggestion. In this paper, we present experimental results to show that the quantitative H/D isotope effect is dependent on the channel current density, which support the multiple vibrational excitation mechanisms.

Deuterium Isotope Effect for AC and DC Hot-Carrier Degradation of MOS Transistors: a Comparison Study

Deuterium Pressure Dependence of Characteristics and Hot-Carrier Reliability of CMOS Devices

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

On the Mechanism for Interface Trap Generation in MOS Transistors Due to Channel Hot Carrier Stressing

Deuterium process of CMOS devices: new phenomena and dramatic improvement

The Hot-Carrier-Induced Degradation of Soi Ligbt under Ac Stress Conditions

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes?

Role of Holes in the Isotope Effect and Mechanisms for the Metal–oxide–semiconductor Device Degradation

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for P-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 Μm Technology

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Direct Evidence of Multiple Vibrational Excitation for the Si–H/D Bond Breaking in Metal–oxide–semiconductor Transistors

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

An Investigation Of Dc/Ac Hot Carrier Degradation In Multiple-Fin Soi Finfets

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing