Abstract:Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. We find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, we observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. We note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between different densities of amorphous samples. For any reasonable deformation rate, we observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in denser structures relative to crystalline Si. We conclude that although there is substantial agreement between experimental measurements and most simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally we show that annealing simulations of our amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in amorphous silicon are analogous to those in crystalline silicon.

Enhanced Stability of Deuterium in Silicon

Isotopic effect between hydrogen and deuterium emission in silicon

Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices

Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors

Mechanisms of Metastability in Hydrogenated Amorphous Silicon

Mechanisms for Metastability in Hydrogenated Amorphous Silicon

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Phonon-energy-coupling Enhancement: Strengthening the Chemical Bonds of the SiO2∕Si System

Direct Evidence of Multiple Vibrational Excitation for the Si–H/D Bond Breaking in Metal–oxide–semiconductor Transistors

Evidence for Energy Coupling from the Si–D Vibration Mode to the Si–Si and Si–O Vibration Modes at the SiO2/Si Interface

Deuterium process of CMOS devices: new phenomena and dramatic improvement

Metastability of Amorphous Silicon from Silicon Network Rebonding

Optimizing surface defects for atomic-scale electronics: Si dangling bonds

Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices

Double lattice potential for molecular dynamics simulation of silicon with demonstrated validity

Modified Failure Mechanism of Silicon Through Excess Electrons and Holes

Role of Holes in the Isotope Effect and Mechanisms for the Metal–oxide–semiconductor Device Degradation

Phonon-Energy-Coupling Enhancement: Dramatic Improvement of the Reliability of Silicon MOS Transistors

Direct simulation of ion beam induced stressing and amorphization of silicon

Atomistic simulation of brittle-to-ductile transition in silicon carbide embedded with nano-sized helium bubbles

Locking of Screw Dislocations in Silicon Due to Core Structure Transformation