Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

Modified Failure Mechanism of Silicon Through Excess Electrons and Holes

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Electronically Induced Defect Creation at Semiconductor/oxide Interface Revealed by Time-Dependent Density Functional Theory

Evolution of secondary defects in arsenic implanted Si

Effects of excess electrons/holes on fracture toughness of single-crystal Si

Modified Generalized Stacking Fault Energy Surface of II-VI Ionic Crystals from Excess Electrons and Holes

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Illuminating the Photomechanical Effect: Exploring the Relationship Between Electron-Hole Excitation and Deformation Mechanisms in Nanotwinned Boron Carbide

Enhanced Ductility of III-V Covalent Semiconductors from Electrons and Holes

Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Phonon-limited mobility for electrons and holes in highly-strained silicon

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Uniting Ultrahigh Plasticity with Near‐Theoretical Strength in Submicron‐Scale Si via Surface Healing

Defects and Doping in One-Dimensional SiC Nanostructures

Locking of Screw Dislocations in Silicon Due to Core Structure Transformation

Role of Holes in the Isotope Effect and Mechanisms for the Metal–oxide–semiconductor Device Degradation

Optimizing surface defects for atomic-scale electronics: Si dangling bonds

Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures