Metastability of Amorphous Silicon from Silicon Network Rebonding

R. Biswas,Bicai Pan,Y. Y. Ye
DOI: https://doi.org/10.1103/physrevlett.88.205502
IF: 8.6
2002-01-01
Physical Review Letters
Abstract:We propose a network rebonding model for light-induced metastability in amorphous silicon, involving bonding rearrangements of silicon and hydrogen atoms. Nonradiative recombination breaks weak silicon bonds and generates dangling bond-floating bond pairs, with very low activation energies. The transient floating bonds annihilate, generating local hydrogen motion. Charged defects are also found. Support for these processes is found with tight-binding molecular dynamics simulations. The model accounts for major experimental features of the Staebler-Wronski effect including electron-spin resonance data, the t(1/3) kinetics of defect formation, two types of metastable dangling bonds, and hysteretic annealing.
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