Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

A New Model for the Staebler Wronski Effect

The Effect of Surface Bond Reconstruction of Thermal Contact Surfaces on Phonon Transport in Atomic Wire

Microscopic Nature of Staebler-Wronski Defect Formation in Amorphous Silicon

A Stochastic Model for Current and Voltage Oscillations of the Si Electrode

Metastability of Amorphous Silicon from Silicon Network Rebonding

Interactions of atomic hydrogen with amorphous SiO 2

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Evolution of secondary defects in arsenic implanted Si

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Mechanisms of Metastability in Hydrogenated Amorphous Silicon

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Mechanisms for Metastability in Hydrogenated Amorphous Silicon

Modified Failure Mechanism of Silicon Through Excess Electrons and Holes

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Influence of Reconstruction Defects on Dislocation Motion in Si

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Metastability and anharmonicity enhance defect-assisted nonradiative recombination in low-symmetry semiconductors

Enhanced Stability of Deuterium in Silicon