Effect of Atomic Hydrogen on Boron-Doped Germanium: an Ab Initio Study

R. Q. Wu,M. Yang,Y. P. Feng,Y. F. Ouyang
DOI: https://doi.org/10.1063/1.2976669
IF: 4
2008-01-01
Applied Physics Letters
Abstract:Interaction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p-type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B–H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge–Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations.
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