Abstract:Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (offering a mobility gain of approximately x 2 for electrons and x 4 for holes when compared to conventional Si channels). However, many issues still need to be addressed before Ge can be implemented in high-performance field-effect-transistor (FET) devices. One of the key issues is to provide a high-quality interfacial layer, which does not lead to substantial drive current degradation in both low equivalent oxide thickness and short channel regime. In recent years, a wide range of materials and processes have been investigated to obtain proper interfacial properties, including different methods for Ge surface passivation, various high-k dielectrics and metal gate materials and deposition methods, and different post-deposition annealing treatments. It is observed that each process step can significantly affect the overall metal-oxide-semiconductor (MOS)-FET device performance. In this review, we describe and compare combinations of the most commonly used Ge surface passivation methods (e.g. epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics. In particular, plasma-based processes for surface passivation in combination with plasma-enhanced atomic layer deposition for high-k depositions are shown to result in high-quality MOS structures. To further improve properties, the gate stack can be annealed after deposition. The effects of annealing temperature and ambient on the electrical properties of the MOS structure are also discussed.

Impact of Germanium Related Defects on Electrical Performance of Hafnium Oxide

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Atomic Scale Study of the Degradation Mechanism of Boron Contaminated Hafnium Oxide

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

Fabrication and characteristics of high-K HfO2 gate dielectrics on n- germanium

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Defect Evaluation in InGaAs Field Effect Transistors with HfO2 or Al2O3 Dielectric

Germanium Effect on Oxygen‐related Defects in Czochralski Silicon

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Germanium in Czochralski Silicon

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Investigation on Germanium Transistors with HfOx-Based Gate Stacks for CMOS Operations

Comparative Study of Passivation Mechanism of Oxygen Vacancy with Fluorine in HfO2 and HfSiO4

Germanium Surface Passivation and Atomic Layer Deposition of High-K Dielectrics-A Tutorial Review on Ge-Based Mos Capacitors

Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics