Abstract:Dopant atoms confined in silicon nanoscale channel can be ionized to form quantum dots (QDs). Several dopant atoms couple with each other forming energy bands, where the electron hopping behavior can be described by the Hubbard model. This characteristic renders dopant-induced quantum dots particularly appealing for applications in nanoelectronic and quantum devices. Herein we study the gate-driven transition temperatures of electron hopping behavior in upper and lower Hubbard bands formed by dopant-induced QD array in junctionless silicon nanowire transistors. The gate-dependent transition temperatures are calculated for three stages of electron hopping behaviors including Efros-Shklovskii Variable Range Hopping (ES-VRH), Mott Variable Range Hopping (Mott-VRH) and Nearest Neighbor Hopping (NNH). Our experimental results indicate that the ES-VRH in arrays of dopant atoms occurs in the domination of a long-range Coulomb interaction, in which the hopping distance relies on the Coulomb gap. Furthermore, the localization length of ES-VRH can be modulated by gate voltages.Those factors lead to the significant difference of transition temperatures between the upper and lower Hubbard bands. In addition, we find that the source-drain bias voltage can effectively modulate the transition temperatures between VRH and NNH by thermal activation energies under different bias voltages Vds.

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Observation of Landau Quantization and Standing Waves in HfSiS

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Photocurrent of Hydrogenated Nanocrystalline Silicon Thin Film/crystalline Silicon Heterostructure

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Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Effect of Si Nanoparticles on Electronic Transport Mechanisms in P-doped Silicon-Rich Silicon Nitride/c-Si Heterojunction Devices

Quantum Confinement Energy in Nanocrystalline Silicon Dots from High-Frequency Conductance Measurement

Carrier Transport in Films of Alkyl-Ligand-Terminated Silicon Nanocrystals

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire