Abstract:A series of low temperature processes incorporated in the silicon on insulator (SOI) formation using Si molecular beam epitaxial growth on porous silicon dramatically reduces the impurity ramp-up from the porous silicon substrate and lowers the doping level in the epitaxial Si layer. A double-layer porous silicon system with a spongy microstructure layer on top of a dendritic microstructure layer was fabricated on a moderately doped p-type Si wafer using a two-step anodization process, and was used as the substrate for Si epitaxy. An extended low temperature annealing in high vacuum was found to be helpful in stabilizing the porous silicon and making it less susceptible to microstructure change during the subsequent heat-treatment. Prior to epitaxy, a Ge-beam treatment was used to lower the temperature necessary for the Si surface cleaning. A low temperature preoxidation process stabilized the porous silicon during the subsequent high temperature oxidation. The choice of a moderately doped substrate and all these low temperature processes helped to achieve a Si epitaxial layer doping of 6 to 8 x 10(15) cm(-3), which is very close to meeting the requirement for direct device fabrication in the SOI without any additional doping compensation.

Some Material Structural Properties of SOI Substrates Produced by SDB Technology

Novel SOI technology - H+ implantation, bonding and separation

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

SOI Wafer Achieved by Smart-Cut Process

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Pillar-lattice-assisted stress-free silicon-on-insulator

3C-SiC Growth on SOI with High Silicon-Over-Layer

Effect of the Substrate Temperature on the Formation of SOI Materials by O Ion Implantation

TEM Analysis for Microstructure of SOI Material

Study of Silicon-on-glass Waveguides

Auger-Electron and Ir Spectroscopic Studies of Soi Structure Formed by Oxygen and Nitrogen Implantation

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

A novel bonding partial SOI structure with polysilicon transition layer

Fabrication of Thick BOX SOI by Smart-cut Technology

Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Revealing the structure of SiO2 and its effects on electrical properties

Study on interfacial SiO2 layer of silicon direct bonding

Defects in SOI Materials and Related Characterization

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique