Abstract:The main obstacle of implementing numerical simulations for the prediction of nucleation and epitaxial growth is the variety of physical processes with a considerable difference in time and spatial scales. During the growth of nanostructures and epitaxy deposition of atoms, surface and bulk diffusion, nucleation of two-dimensional and three-dimensional clusters, transitions from two dimensional to three dimensional growth, stress relaxation occur. Thus, it is challenging to describe all of them in the framework of a single physical model. In the present work a multi-scale simulation of the epitaxial growth of silicon carbide nanostructures on silicon using three numerical methods, namely Molecular Dynamics, kinetic Monte Carlo, and the Rate Equations was implemented. Molecular Dynamics was used for the estimation of kinetic parameters of atoms and stress fields at the surface, which are input parameters for the other simulation methods. Kinetic Monte Carlo simulations allowed investigating basic nucleation processes and the transition from two dimensional nucleation to three dimensional cluster growth as well as the ordering of nanoclusters. Furthermore the influence of impurities on the nucleation of nanoscale SiC was studied. The energy barriers values obtained in Molecular Dynamics and the physical model used in the rate equation simulations was validated by Kinetic Monte Carlo. The Rate Equation simulation allowed studying the growth process at larger time scales taking into account the surface stress fields. As a result, a full time scale description spanning over a large substrate area of the morphological and structural surface evolution during SiC formation on Si was developed.

Simulation of Si Film Growth on Si(100)-(2×1) Surface

Application of self-consistent rate equations approach for SiC (0001) surface epitaxial growth

Kinetic Monte Carlo Simulation of Thin Film Growth

Study of Si and Ge growth on Si(100) surface

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition

Simulation study on Si and Ge film growth by cluster deposition

Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces

Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study

A Numerical Study of Stress Controlled Surface Diffusion During Epitaxial Film Growth

Monte-Carlo Simulation of Crystal Growth with Diffusion Employing an Anisotropic Model

Application of Computer: Monte Carlo Simulation of Thin Film Growth

Simulation of Abnormal Effect in Film Groeth Using KMC Method

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Anomalous intralayer growth of epitaxial Si on Ag(111)

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Island Nucleation in Silicon on Si(111) Growth under Chemical Vapor Deposition

Epitaxial growth of Cu on Cu(001): experiments and simulations

Molecular-dynamics simulation of Si1−xGex epitaxial growth on Si(100)

Kinetic Monte Carlo Simulation of Initial Nucleation Stage of 2D Ge Islands

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Effects of deposition dynamics on epitaxial growth