Abstract:Computer simulations have a wide range of applications in crystallization of which crystal habit prediction is one of the most important. In the absence of routine experimental methods, computer simulations can provide a detailed picture of the kinetics of crystallization. The mechanism of crystal growth from solutions is subject to different processes. Present computational methods available as part of commercially available modeling software are based upon either the Bravais–Friedel–Donnay–Harker (BFDH), the attachment energy (AE) or the surface energy models and do not account for the influence of the growth environment of the crystal upon its growth. In order to control the growth of crystals and therefore their habit, it is necessary to understand the factors that govern individual face growth rates. Since crystal growth depends upon mass transport to the surface of the crystal whenever crystal growth occurs in solution, it is reasonable to assume that a quantitative description of the mass transport at the solid liquid interface can give useful insight concerning the calculation of face growth rates. If crystallization takes place in the melt, consideration should be focused on heat transfer. Here, the determination of molecular scale features of crystal growth and a road map how to simulate face growth rates under consideration of the growth environment is presented. Molecular dynamics simulations are employed to study diffusion coefficients. The two examples presented here are benzophenone and hydroquinone. The one component system is considered a melt and computer experiments are performed on the system and characteristic changes of the transport parameters depending upon variations in the external factors, such as temperature level, simulation time, number of molecules in the amorphous cell, and force fields used in the simulations. After acquiring enough simulation experience and eliminating unsuitable system conditions a solution (solute-solvent) was simulated and effects of changes of other system parameters such as supersaturation level were investigated. The data obtained from these simulations are used to calculate the transport properties of the molecules under the given conditions and are compared to the results of the empirical equations which are available in the literature. Data obtained from these simulations producing diffusion coefficient values are used to correlate to the calculations of face growth rates by considering the ambient system conditions. Finally, depending upon the value of the mass transfer coefficients, the process controlling solution growth is defined and face growth rates are calculated depending upon the process which limits the face growth.

Monte-Carlo Simulation of Crystal Growth with Diffusion Employing an Anisotropic Model

Monte-Carlo Simulation of F.c.c. Crystal Growth: with an Anisotropic Variable Bond Model

Monte-carlo modeling for grain growth process in Vapor-Liquid-Solid phase sintered materials

Significance of many-body interactions in Monte Carlo simulation of crystal growth

Effects of Many-Body Interactions on Crystal-Vapor Interface: Monte Carlo Simulation

Modeling of Diffusion for Crystal Growth

Monte-Carlo simulation of isotropic and anisotropic grain growth in liquid phase sintered ceramics

Monte-Carlo simulation of grain growth in Vapor-Liquid-Solid phase sintered material

Direct Coupling of Free Diffusion Models to Microscopic Models of Confined Crystal Growth and Dissolution

Significance of many-body interactions in Monte Carlo simulation of crystal-vapour interface

On anisotropy function in crystal growth simulations using Lattice Boltzmann equation

PHASE-FIELD SIMULATION OF THE EFFECT OF KINETIC ANISOTROPY ON CRYSTAL GROWTH IN UNDERCOOLED MELTS

Incorporating Surface Diffusion into a Cellular Automata Model of Ice Growth from Water Vapor

Atomic scale modeling of vicinal surface growth from melts using the phase-field crystal method

Monte Carlo Simulation Of Thin-Film Growth On A Surface With A Triangular Lattice

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition

The influence of the crystal lattice on coarsening in unstable epitaxial growth

Modeling of crystal growth with density change induced flows by the anisotropic lattice Boltzmann scheme

Modeling and Simulation of Si Crystal Growth from Melt

A joint diffusion/collision model for crystal growth in pure liquid metals

Modeling Diffusion-Limited Crystal Growth from Vapor using a Commercial Finite-Element Analysis Code