Application of Computer: Monte Carlo Simulation of Thin Film Growth

张佩峰,午锁平,郑小平,刘军,贺德衍,岳进

DOI: https://doi.org/10.3321/j.issn:0455-2059.2003.06.008

2003-01-01

Abstract:A three-dimensional kinetic Monte Carlo (KMC) technique has been developed for simulating growth of thin Cu films. It is based on a model that involves incident atoms attachment,surface diffusion and related effects of the atoms on the growing surface,and atoms detachment from the growing surface. A great improvement was made on calculation of the activation barriers for the surface atoms diffusion. The results showed that there exists a critical temperature at a certain deposition rate,the surface roughness decreases and the relative density increases with the increasing substrate temperature,the surface roughness is minimum and the relative density of film saturates when the substrate temperature approach the critical temperature,and then the surface roughness increases with the increasing substrate temperature. The critical temperature is a function of the deposition rate and it increases with the increasing deposition rate. The influence of the deposition rate to surface roughness is different at various substrate temperatures. With the increasing deposition rate,the surface roughness increases at a lower substrate temperature while it decreases at a higher temperature. The result also shows that the relative density decreases with either the increasing deposition or the increasing average thickness of the film.