Dependence of Thin Film Growth on Substrate Temperature Kinetic Monte Carlo Simulation of Thin Film Growth

Xiao-Ping Zheng,Pei-Feng Zhang,Duo-wang Fan

DOI: https://doi.org/10.1109/inow.2007.4303006

2007-01-01

Abstract:A three-dimensional KMC technique has been developed for simulating growth of thin films. The surface roughness and the relative density of the films were simulated as functions of growth substrate temperature and deposition rate.

What problem does this paper attempt to address?

Application of Computer: Monte Carlo Simulation of Thin Film Growth

张佩峰,午锁平,郑小平,刘军,贺德衍,岳进

DOI: https://doi.org/10.3321/j.issn:0455-2059.2003.06.008

2003-01-01

Abstract:A three-dimensional kinetic Monte Carlo (KMC) technique has been developed for simulating growth of thin Cu films. It is based on a model that involves incident atoms attachment,surface diffusion and related effects of the atoms on the growing surface,and atoms detachment from the growing surface. A great improvement was made on calculation of the activation barriers for the surface atoms diffusion. The results showed that there exists a critical temperature at a certain deposition rate,the surface roughness decreases and the relative density increases with the increasing substrate temperature,the surface roughness is minimum and the relative density of film saturates when the substrate temperature approach the critical temperature,and then the surface roughness increases with the increasing substrate temperature. The critical temperature is a function of the deposition rate and it increases with the increasing deposition rate. The influence of the deposition rate to surface roughness is different at various substrate temperatures. With the increasing deposition rate,the surface roughness increases at a lower substrate temperature while it decreases at a higher temperature. The result also shows that the relative density decreases with either the increasing deposition or the increasing average thickness of the film.
A Computer Simulation of Nucleation and Growth of Thin Films

Zheng Xiaoping,Zhang Peifeng,He Deyan,Liu Jun,Ma Jiantai

DOI: https://doi.org/10.1360/03yw0220

IF: 3.572

2004-01-01

Computational Materials Science

Abstract:A three-dimensional kinetic Monte Carlo technique has been developed for simulating the nucleation and growth of thin films. This model involves incident atom attachment, surface diffusion of the atoms on the growing surface and atom detachment from the growing surface. It takes some new effects into account, such as a significant improvement in calculation of activation energy for the atom diffusion, which renders the model more reasonable. In addition three optimum temperatures and the consistency of their dependence on deposition rate have been found out; the dependence of the surface roughness and relative density on the deposition rate has been discussed; and the approximation of freezing neighbour atoms and periodic boundary conditions has been applied.
Kinetic Monte Carlo Simulation of Thin Film Growth

Peifeng Zhang,Xiaoping Zheng,Deyan He

DOI: https://doi.org/10.1360/03yw0069

IF: 3.572

2010-01-01

Computational Materials Science

Abstract:A novel model consisting of basic micro-processes has been developed on the basis of the classic diffusion theory. It is first time that the concept of exchange rate has introduced, and the growing process of surfactant-mediated epitaxial thin-film growth has been simulated with Kinetic Monte Carlo (KMC) technique. The results of simulation found that the exchange reaction of RLA model is a combination of the basic micro-processes. The majorities of exchange are not complete position exchange and the exchange rate doesn't always equal one. Both surfactant atoms and adatoms would diffuse from one layer to another. The diffusion happens mostly between single atoms and the diffusing atoms increase with substrate temperature.
Kinetic Monte Carlo simulation of nucleation at the initial stage of thin film growth

Peifeng Zhang,Xiaoping Zheng,Deyan He

2005-01-01

Journal of the Korean Physical Society

Abstract:Nucleation at the initial stage of thin film growth has been simulated by using a three-dimensional kinetic Monte Carlo technique. The morphologies of the nucleation were taken by computer-graphic technique. It has been shown that the size of the island nucleation increases with increasing substrate temperature. A maximum nucleation density can be obtained for each deposition rate. The temperature T-n at which the nucleation density maximizes is a function of the deposition rate. The nucleation density decreases with decreasing deposition rate at substrate temperatures higher than T-n. A transition from two-dimensional to three-dimensional nucleation was observed at higher substrate temperatures and lower deposition rates.
Kinetic Monte Carlo Simulation of Film Morphologies at the Initial Stages

Zheng XiaoPing,Zhang PeiFeng,He DeYan,Li Lian

DOI: https://doi.org/10.1007/s11433-007-0011-4

2008-01-01

Abstract:The morphologies at the initial stages of thin film growth were studied by using Kinetic Monte Carlo techniques. A more efficient model was used to calculate the activity energy. The model involves incident atom attachment, diffusion, detachment from the surface, detached atom returning, and dimer diffusion. We edited a set of software of the model and simulated the surface morphologies by the principle of computer graphics. It is shown that the nucleuses formed at the initial stages and the surface morphologies at high temperatures are very different from those at low temperatures. The later surface growth depends on the nucleuses at the initial stages. The mechanism results from the atom thermal movement, the temperature determines the diffusion ability, and the deposition rate determines the diffusion time.
Modelling of an obliquely deposited thin film in three dimensions by kinetic Monte Carlo method

Liu Zu-Li,Zhang Xue-Feng,Yao Kai-Lun,Wei He-Lin,Huang Yun-Mi,刘祖黎,张雪锋,姚凯伦,魏合林,黄运米,ZL Liu,XF Zhang,KL Yao,HL Wei,YM Huang

DOI: https://doi.org/10.1088/1009-1963/13/12/024

2004-01-01

Chinese Physics

Abstract:A simulation of the growth of an obliquely deposited thin film in a three-dimensional lattice was made using kinetic Monte Carlo method. Cu growth in three dimensions on a (001) substrate with high deposition rates has been simulated in this model. We mainly investigated the variation of three-dimensional morphology and microstructure of films with incidence angle of sputtered flux. The relation of roughness and densities of films with incidence angle was also investigated. The simulation results show that the surface roughness increases and the relative density of thin film decreases with increasing incidence angle, respectively; the columnar structures were separated by void regions for large incidence angle and high deposition rate. The simulation results are in good agreement with experimental results. However, the orientation angle of columns is not completely consistent with the classical tangent rule.
Surface Morphology of Thin Film Deposited on Rotating Substrate by EB-PVD

Ying-Chum Shan,Xiao-Dong He,Ming-Wei Li,Yao Li

DOI: https://doi.org/10.4028/www.scientific.net/kem.336-338.2238

2007-01-01

Key Engineering Materials

Abstract:The thin film deposited by electron beam physical vapor deposition (EB-PVD) on rotating substrate was approached via a kinetic Monte Carlo (KMC) algorithm on a “surface” of tight-packed rows. The motivation is to study the surface morphology distribution of thin film along the substrate radial. Effective deposition rate model and effective incident angle model were established along the substrate radial. Two phenomena are incorporated in the KMC simulation: adatom-surface collision and adatom diffusion. The KMC simulations show that the surface roughness of thin film is small and the changing of surface roughness is small near the side of rotation axis, however, the surface roughness is big near the side of substrate edge, and the surface roughness increases quickly with the increasing of substrate radius when r>300 mm. The simulation results indicate that the effective incident angle is the main factor to cause the changing of surface roughness: the effective incident angle does not reach critical value and the deposition rate difference is small when the radius is less than 300 mm, so the surface roughness of thin film in the scope is small and its changing is small, but when r>300 mm, the effective incident angles increase sharply with radius increasing and all of them are above the critical value, which cause surface roughness of thin film to increase quickly. Experiments reveal that the KMC method can predict surface roughness distribution of thin film deposited by EB-PVD on rotating substrate.
Monte Carlo Simulation Of Thin-Film Growth On A Surface With A Triangular Lattice

Hl Wei,Zl Liu,Kl Yao

DOI: https://doi.org/10.1016/s0042-207x(98)00328-5

IF: 4

1999-01-01

Vacuum

Abstract:The thin-film growth process on a triangular lattice surface is studied by a Monte Carlo simulation (MCS). Four kinetic processes are considered: atom deposition, adatom diffusion, adatom nucleation and adatom reevaporation. We pay close attention to the substrate temperature and the interaction between the adatom and neighboring particles. The interaction energy between the adatom and the neighboring atoms around it is calculated by the Morse potential. The results show that the higher the temperature, the more compact the island. As the temperature is low, the film growth becomes fractal growth. At higher temperature, the island becomes more regular in shape that resembles the surface morphology. (C) 1999 Elsevier Science Ltd. All rights reserved.
Monte-Carlo Simulation of Thin Film Growth Process

HL Wei,ZL Liu,KL Yao

DOI: https://doi.org/10.7498/aps.49.791

IF: 0.906

2000-01-01

Acta Physica Sinica

Abstract:In this paper,the effect of the substrate temperature on the island morphology and size at the early stage of thin film growth is studied by Monte-Carlo simulation. In our model,three processes are considered:particle deposition,adatom diffusion and adatom reevaporation. The deposition process is independent of diffusion and reevaporation processes. We pay close attention to the substrate temperature and the interaction between adatom and neighboring particles. The interaction energy between the adatom and the neighboring atoms around it is calculated by Morse potential. The results show that, with increasing temperature,the island growth transits from fractal to compact shape. As the temperature is very high,the island becomes more regular in shape,which resembles the surface morphology. This result is in agreement with experimental result. We found that the temperature range of the transformation of film morphology from fractal to compact shape is 310-400 K.
Kinetic Monte Carlo Simulation of Deposition of Energetic Copper Atoms on A Cu(001) Substrate

ZL Liu,L Yu,KL Yao,XB Jing,XA Li,XZ Sun

DOI: https://doi.org/10.1088/0022-3727/38/23/010

2005-01-01

Abstract:A three-dimensional (3D) energy-dependent kinetic Monte Carlo technique is developed to simulate thin film growth with deposition of energetic atoms. We incorporate the effects of the incident kinetic energy and the incident angle of atomic fluxes into the conventional vapour phase deposition model. The atom reflection, the biased diffusion and the athermal diffusion caused by the incident energy and the incident angle are included in our study. We simulate the film morphology and the surface roughness of homoepitaxial Cu films on a Cu(001) substrate with various incident energies and incident angles. The simulation results show that the energetic atoms can enhance the smoothness of the surface. This effect is very significant at a low substrate temperature or a high deposition rate. For a fixed incident energy, there exists a transition angle where the surface roughness is a minimum. In addition, the surface morphology of the Cu film in sputtering deposition is also studied and the approximate energy and angle distributions of the sputtered atoms are used. The results are in agreement with the experimental results.
Thin film deposition with time varying temperature

T. A. de Assis,F. D. A. A. Reis

DOI: https://doi.org/10.1088/1742-5468/2013/10/P10008

2013-09-15

Abstract:We study the effects of time-dependent substrate/film temperature in the deposition of a mesoscopically thick film using a statistical model that accounts for diffusion of adatoms without lateral neighbors whose coefficients depend on an activation energy and temperature. Dynamic scaling with fixed temperature is extended to predict conditions in which the temperature variation significantly affects surface roughness scaling. It agrees with computer simulation results for deposition of up to ${10}^4$ atomic layers and maximal temperature changes of $30 K$, near or below the room temperature. If the temperature decreases during the growth, the global roughness may have a rapid growth, with effective exponents larger than 1/2 due to the time-decreasing adatom mobility. The local roughness in small box size shows typical evidence of anomalous scaling, with anomaly exponents depending on the particular form of temperature decrease. If the temperature increases during the growth, a non-monotonic evolution of the global roughness may be observed, which is explained by the competition of kinetic roughening and the smoothing effect of increasing diffusion lengths. The extension of the theoretical approach to film deposition with other activation energy barriers shows that similar conditions on temperature variation may lead to the same morphological features. Equivalent results may also be observed by controlling the deposition flux.

Statistical Mechanics
Kinetic Monte Carlo Simulation of Deposition of Co Thin Film on Cu(001)

Liu Zuli,Shi Yanli,Jing Xingbin,Yu Li,Yao Kailun

DOI: https://doi.org/10.1088/1009-0630/9/5/07

2007-01-01

Abstract:A kinetic Monte Carlo (kMC) simulation is conducted to study the growth of ultrathin film of Co on Cu(001) surface. The many-body, tight-binding potential model is used in the simulation to represent the interatomic potential. The film morphology of heteroepitaxial Co film on a Cu(001) substrate at the transient and final state conditions with various incident energies is simulated. The Co covered area and the thickness of the film growth of the first two layers are investigated. The simulation results show that the incident energy influences the film growth and structure. There exists a transition energy where the interfacial roughness is minimum. There are some void regions in the film in the final state, because of the influence of the island growth in the first few layers. In addition, there are deviations from ideal layer-by-layer growth at a coverage from 0 similar to 2 monolayers (ML).
Effects of Substrate Temperature on Fractal of PVD Thin Film

ShanYingchun,Xu Jiujun,He Xiaodong,He Fei,Li Mingwei

DOI: https://doi.org/10.3321/j.issn:1002-185x.2007.z1.267

2007-01-01

Rare Metal Materials and Engineering

Abstract:Kinetic Monte Carlo method was applied to simulate the relationship between substrate temperature and the microstructure of the thin film fabricated by means of physical vapor deposition (PVD), and its surface topography was studied by fractal theory. Two phenomena were incorporated in the KMC model: adatom-surface collision and adatom diffusion. In the KMC simulation, Momentum Scheme was used to locate the initial location of adatom, activation energy was calculated by molecular statics (MS) calculations, and the algorithm was carried out by red-black tree. The results reveal that the fractal of thin film is less than 2.04 and thin film surface is smooth when substrate temperature is higher than 500 K. However, thin film fractal increases and surface become more and more rough with decreasing of substrate temperature when substrate temperature is lower than 500 K. When substrate temperature is 250 K thin film fractal is 2.32 and rough surface, fine rugosity and defect were achieved. The relationships between thin film fractal and substrate temperature indicate that higher substrate temperature is helpful to smooth film preparation with small fractal, however, thin film fractal is large and surface structure is complex when substrate temperature is lower. The study results agree with the study. of substrate temperature and surface roughness factor, which reveal that fractal is a way to evaluate thin film surface topography.
Simulation of Abnormal Effect in Film Groeth Using KMC Method

郑小平,张佩峰,贺德衍,郝远

DOI: https://doi.org/10.3969/j.issn.1001-4381.2008.10.008

2008-01-01

Abstract:On the basis of the classic diffusion theory we have advanced a novel model,which consists of the basic micro-processes,and have simulated the growing process of surfactant-mediated epitaxial thin-film growth with the method of Kinetic Monte Carlo(KMC).The simulated results indicated that the adatoms easily aggregate to island seeds at the low temperature and the abnormal effect results from that the surfactant atoms are more easier to be activated and to diffuse than adatoms.Meanwhile,it was found that both surfactant atoms and adatoms would diffuse from one layer to another.The exchange rate is not constantly one,but is related with the substrate temperature,deposition flux,deposited depth and so on.
Simulation of Complete Film Growth Process by Magnetron Sputtering

Chuanwei Dai,Changxin Gu,Qi Sun,Liying Shan

DOI: https://doi.org/10.3969/j.issn.1672-7126.2009.06.02

2009-01-01

Abstract:The various aspects of the complete films growth process,including generation of the sputtercd atoms,its collision and scattering,its deposition,formation of clusters,and film growth,were simulated with the newly-developed multi-scale model,by a combination of particle-in-cells (PIC),Monte Carlo and clouds-in-cell (CIC) methods.The impacts of film growth conditions,such as the substrate temperature,deposition rate,magnetic field distributions,and separation between target and substrate,on film growth and properties were analytically studied.The simulated results show that the substrate temperature and the deposition rate strongly affect the initial stage of the film growth.For example,higher temperature and lower deposition rate results in denser and more compact films.Large target-substrate distance reduces the surfaces roughness;and the magnetic field distribution significantly influenccs target utilization rate,but has little effect on the final film topagraphy.
Thickness Distribution of Large Scale Metallic Sheet by Eb-Pvd on Rotating Substrate

YC Shan,XD He,MW Li,Y Li

2005-01-01

Abstract:A two-dimensional kinetic Monte-Carlo(KMC) Method was used to approach the thickness distribution of large scale metallic sheet deposited by electron beam physical vapor deposition (EB PVD) on rotating substrate The KMC model involve incident atom attachment. adatom diffusion and adatom detachment. The effective deposition rate and effective incident angle along substrate radial were studied as influencing factor of sheet thickness distribution. The KMC simulation results indicate that incident angle is a very important factor to affect the sheet thickness distribution as well as theory deposition mass. The experiments results show that the KMC model can pre diet the thickness distribution of large scale sheet deposited by EB PVD toll rotating substrate.
A Monte Carlo Simulation Study of Substrate Effect on AB TypeThin Film Growth

İzzet Paruğ Duru,Şahin Aktaş

DOI: https://doi.org/10.48550/arXiv.1210.4419

2012-10-16

Abstract:An iterative algorithm based on Monte Carlo method is used to model thin film growth of AB type molecule and crystallization. Primarly, PVD technique is investigated since it is one of the most preferred on thin film growth processes. The formation of thin film has been simulated for a cubic region with 10000 A type and 10000 B type atoms. Up to third nearest neighboring cells have been taken into account to realize the inter-atomic interactions. Boltzmann statistics is used to deal temperature effect by treating both A and B atoms as classical particles. The proposed substrate with the same crystal structure of the film was simulated by fixing the first layer of the film as having a perfect crystal structure. Roughness of the film surface is analyzed by sampling the RMS (Root mean square roughness) parameter both analytically and visually.

Materials Science,Computational Physics
Monte Carlo Simulation of Influence of Inhomogeneous Interaction Energy on Thin Film Growth

Liu Zu-Li,Yuan Xin-Xi,Wei He-Lin,Yao Kai-Lun

DOI: https://doi.org/10.7498/aps.59.6430

2010-01-01

Abstract:The influence of inhomogeneous interaction energy between deposited atoms and substrate atoms on island film growth is investigated by Monte Carlo simulation on a triangular lattice substrate. The Gaussian distribution is employed to describe the inhomogeneity of interaction energy. The results illustrate that the influence of inhomogeneous interaction energy on the growth of thin film is related to the degree of the inhomogeneity and the experimental conditions (such as substrate temperature).At medium temperature the inhomogeneity of interaction energy has notable influence on the island number and the island size. Increasing in temperature could counteract the influence of the inhomogeneity of interaction energy.
Monte Carlo and kinetic Monte Carlo methods

Peter Kratzer

DOI: https://doi.org/10.48550/arXiv.0904.2556

2009-04-17

Abstract:This article reviews the basic computational techniques for carrying out multi-scale simulations using statistical methods, with the focus on simulations of epitaxial growth. First, the statistical-physics background behind Monte Carlo simulations is briefly described. The kinetic Monte Carlo (kMC) method is introduced as an extension of the more wide-spread thermodynamic Monte Carlo methods, and algorithms for kMC simulations, including parallel ones, are discussed in some detail. The step from the atomistic picture to the more coarse-grained description of Monte Carlo simulations is exemplified for the case of surface diffusion. Here, the aim is the derivation of rate constants from knowledge about the underlying atomic processes. Both the simple approach of Transition State Theory, as well as more recent approaches using accelerated molecular dynamics are reviewed. Finally, I address the point that simplifications often need to be introduced in practical Monte Carlo simulations in order to reduce the complexity of 'real' atomic processes. Different 'flavors' of kMC simulations and the potential pitfalls related to the reduction of complexity are presented in the context of simulations of epitaxial growth.

Materials Science,Statistical Mechanics,Computational Physics
Numerical simulation of metal evaporation based on the kinetic model equation and the direct simulation Monte Carlo method

Xiaoyong Lu,Xiaozhang Zhang,Zhizhong Zhang

DOI: https://doi.org/10.1088/1674-1056/27/12/124702

2018-01-01

Chinese Physics B

Abstract:Metal evaporation on the basis of the kinetic model equations (BGK and S-model) and the direct simulation Monte Carlo (DSMC) method was investigated computationally under the circumstances of collimators existing or not. Numerical data of distributions of number density, bulk velocity and temperature were reported over a wide range of evaporation rate. It was shown that these results reached a good agreement for the case of small evaporation rate, while the deviations became increasingly obvious with the increase of evaporation rate, especially when the collimators existed. Moreover, the deposition thickness over substrate obtained from the kinetic model equations were inaccurate even though the evaporation rate was small. All of the comparisons showed the reliability of the kinetic model equations, which require less computational cost at small evaporation rate and simple structure.

Dependence of Thin Film Growth on Substrate Temperature Kinetic Monte Carlo Simulation of Thin Film Growth

Application of Computer: Monte Carlo Simulation of Thin Film Growth

A Computer Simulation of Nucleation and Growth of Thin Films

Kinetic Monte Carlo Simulation of Thin Film Growth

Kinetic Monte Carlo simulation of nucleation at the initial stage of thin film growth

Kinetic Monte Carlo Simulation of Film Morphologies at the Initial Stages

Modelling of an obliquely deposited thin film in three dimensions by kinetic Monte Carlo method

Surface Morphology of Thin Film Deposited on Rotating Substrate by EB-PVD

Monte Carlo Simulation Of Thin-Film Growth On A Surface With A Triangular Lattice

Monte-Carlo Simulation of Thin Film Growth Process

Kinetic Monte Carlo Simulation of Deposition of Energetic Copper Atoms on A Cu(001) Substrate

Thin film deposition with time varying temperature

Kinetic Monte Carlo Simulation of Deposition of Co Thin Film on Cu(001)

Effects of Substrate Temperature on Fractal of PVD Thin Film

Simulation of Abnormal Effect in Film Groeth Using KMC Method

Simulation of Complete Film Growth Process by Magnetron Sputtering

Thickness Distribution of Large Scale Metallic Sheet by Eb-Pvd on Rotating Substrate

A Monte Carlo Simulation Study of Substrate Effect on AB TypeThin Film Growth

Monte Carlo Simulation of Influence of Inhomogeneous Interaction Energy on Thin Film Growth

Monte Carlo and kinetic Monte Carlo methods

Numerical simulation of metal evaporation based on the kinetic model equation and the direct simulation Monte Carlo method