High-sensitivity GMR with low coercivity in top-IrMn spin-valves

H.R. Liu,B.J. Qu,T.L. Ren,L.T. Liu,H.L. Xie,C.X. Li,W.J. Ku
DOI: https://doi.org/10.1016/S0304-8853(03)00407-4
IF: 3.097
2003-01-01
Journal of Magnetism and Magnetic Materials
Abstract:Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bias field is 1.04 and 180Oe, respectively. The maximum sensitivity of the spin-valves is 8.36%/Oe. A reduction of 33.2% of the coercivity was obtained after a 2-min RIE process. Utilizing standard integrated circuit (IC) process, mass production of robust giant magnetoresistance sensors can be achieved with these spin-valve thin films.
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