Influence of reactive ion etching process on magnetic properties of giant magnetoresistive spin valve

曲炳郡,任天令,刘华瑞,刘理天,李志坚,库万军
DOI: https://doi.org/10.3969/j.issn.1007-4252.2004.03.014
2004-01-01
Abstract:Reactive ion etching (RIE) process utilized to form giant magnetoresistive (GMR) spin valve sensing elements was investigated experimentally. The spin valve has a structure of Ta(3.5nm)/Cu(0.7nm)/NiFe(4.5nm)/CoFe(1nm)/Cu(3nm)/CoFe(2nm)/Ru(0.7nm)/CoFe(2nm)/MnIr(8nm)/Ta(4nm). Using Hydrochlorofluorocarbon (HCFC) gas at a flow speed of 10.5 sccm, the good patternsare obtained at RF power of 180 W for 27 min, and the magnetic properties of spin valve are changedonly minutely during RIE process. The results should be positive for manufacture of integrated magnetic sensors based on GMR effect.
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