Study on GMR Magnetic Sensor with Low Coercivity and the Single Domain Model

LIU Peng,LI Wei,YE Shuang-li,REN Tian-ling,LIU Li-tian
DOI: https://doi.org/10.3969/j.issn.1671-4776.2007.07.069
2007-01-01
Abstract:IrMn top spin valves,with the structure of Ta/NiFeCr/NiFe/CoFe/Cu/CoFe/IrMn/Ta,were formed on Si substrate.A series of GMR(giant magnetic resistance) magnetic sensor chips were fabricated based on these spin valves.By an annealing procedure with a weak applied magnetic field,the direction of the easy axis of spin valve films could be changed.When the annealing temperature was 150 ℃ and the magnetic field was 120 Oe,the coercivity of the GMR chips could be reduced to less than 0.2 Oe.In addition,a single domain model of free layer in spin valve was established to explain the annealing effect.After simulating the Meff-H curves of the GMR chips,the simulation results coincide with the experiment results.Therefore,the performance of the GMR magnetic sensors is strongly related to the direction of the easy axis of free layer in spin valves.
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