Study on the Structure of Spin Valve for GMR Sensor with Low Coercivity

LIU Peng,LI Wei,LIU Hua-rui,YE Shuang-li,REN Tian-ling,LIU Li-tian
DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.198
2006-01-01
Abstract:IrMn top spin valves, with the structure of Ta/free layer/Cu/CoFe/IrMn/Ta were deposited on glass substrate by high vacuum DC magnetron sputtering. The coercivity of the spin valves was investigated when NiFe/CoFe and NiFeCr/CoFe were selected as synthetic free layers, respectively. In order to obtain spin valves with low coercivity and high magnetoresistance ratio (MR), NiFeCr/NiFe/CoFe was used as synthetic free layer. The spin valve with NiFeCr/NiFe/CoFe structure had a MR of 10.08% and the coercivity was 4.87×(10~3/4π)A/m. By a transverse annealing procedure with a weak applied external magnetic field, the coercivity could be reduced to less than 0.01×(10~3/4π)A/m. With these improvements, GMR sensors with high MR and low coercivity could be achieved.
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