Abstract:For bottom spin-valves of $\mathrm{NiO}∕\mathrm{Fe}∕\mathrm{Cu}∕{\mathrm{Gd}}_{1\ensuremath{-}x}{\mathrm{Co}}_{x}$, giant magnetoresistance has been measured as a function of thickness and composition of $\mathrm{GdCo}$ layers as well as temperature. For all spin-valves involved here, the giant magnetoresistance has been attributed to contributions of spin-dependent scattering at interfaces and in bulk. The interfacial contribution produces positive giant magnetoresistance ratio for various compositions of $\mathrm{GdCo}$ alloys. However, the bulk contribution produces negative one for the Co contents from $50\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%$ to a critical value ${x}_{\mathrm{C}}(R)$ (between $69\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%$ and $77\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%$) and positive one for higher Co contents. It is suggested that the interfacial asymmetric factor of spin-dependent scattering is larger than 1.0 at the $\mathrm{Cu}∕\mathrm{GdCo}$ for various alloy compositions of $\mathrm{GdCo}$ and that the bulk asymmetric factor in $\mathrm{GdCo}$ layer is smaller and larger than 1.0 for Co contents below and above ${x}_{\mathrm{C}}(R)$, respectively. For spin valves with Co contents below and/or above ${x}_{\mathrm{C}}(R)$, the giant magnetoresistance ratio varies nonmonotonically and/or monotonically as a function of the $\mathrm{GdCo}$ layer thickness (temperature) for a specific temperature (a specific $\mathrm{GdCo}$ layer thickness), respectively. The change of the bulk asymmetric factor in the $\mathrm{GdCo}$ layer with the alloy composition can be attributed to the variation of either the spin alignment of Co and Gd atoms or the spin polarization of the $\mathrm{GdCo}$ layer.

Giant Magnetoresistance Enhancement In Spin Valves With Nano-Oxide Layers

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

A Specular Spin Valve with Discontinuous Nano-Oxide Layers

Magnetoresistance in Nano-Scale Nio-Containing Co/Cu/Co Spin Valves

MAGNETORESISTANCE IN NANO-SCALE <font>NiO</font>-CONTAINING <font>Co/Cu/Co</font> SPIN VALVES

Effect of Interfacial Roughness on Magnetoresistance of Co/Cu/Co/NiO Spin Valve

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

A High Resolution Electron Microscopy Study of Specular Spin Valves with Noncontinuous Nano-Oxide Layers

Effect of Thermal Stability on Magnetoresistance in NiO Spin Valve

Dependence of GMR on NiFe Layer Thickness in High Sensitive Simple Spin Valve

High Giant Magnetoresistance and Thermal Annealing Effects in Perpendicular Magnetic [Co/ni]n-Based Spin Valves

Annealing Effect on Magnetoresistance in Nio-Co-Cu Based Spin Valves

Structure Optimization and Thermal Annealing Effect of IrMn-based Bottom Spin Valves

Optimization of Ta Buffer Layer in IrMn Top Spinvalve

Inverse Giant Magnetoresistance Infe∕cu∕gd1−xcoxspin-Valves

Stability of the Magnetoresistance for NiO-containing Co/Cu/Co Spin Valves Naturally Placed in Air

Improvement of Magnetoresistive Character of NiO/NiFeCo/Cu/NiFeCo Exchange-Biased Spin-Valves Through Annealing in Magnetic Field

Enhancement of Spin-Dependent Scattering and Improvement of Microstructure in Spin Valves by Delayed Deposition

High-sensitivity GMR with low coercivity in top-IrMn spin-valves

Study on influence factors of GMR effect in NiO/NiFeCo/Cu/NiFeCo spin-valves