The Inlaid Al2o3 Tunnel Switch for Ultrathin Ferroelectric Films

An Quan Jiang,Hyun Ju Lee,Gun Hwan Kim,Cheol Seong Hwang
DOI: https://doi.org/10.1002/adma.200802924
IF: 29.4
2009-01-01
Advanced Materials
Abstract:Ferroelectric switching in ultrathin Al2O3/PZT bilayers is studied and used to modulate the applied electric field, allowing the development of novel applications of the combined dielectric tunnel switch/ferroelectric functional layer that can assist in the development of completely new types of electronic, electromechanical, and electrochemical devices.
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