Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, α-In2Se3, known for its electrically addressable vertical polarization, has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in single-domain α-In2Se3. The processes of vertical polarization switching in monolayer α-In2Se3 are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of α-In2Se3, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub> (Adv. Mater. 38/2023)

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6 (Adv. Mater. 38/2023)

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van Der Waals Layered Material CuInP2 S6.

Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP 2 S 6 Heterostructure

Origin of Versatile Polarization State in CuInP2S6

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP$_2$S$_6$

Two-dimensional Ferromagnetism and Driven Ferroelectricity in Van Der Waals CuCrP2S6

Unconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

Thickness-Dependent In-Plane Polarization and Structural Phase Transition in Van Der Waals Ferroelectric CuInP2 S6.

Switchable diode effect in 2D van der Waals ferroelectric CuCrP2S6

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

Effect of chemical intercalation on ferroelectricity in van der Waals layered CuInP2S6

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Discovery of Two-Dimensional Multiferroicity in Van Der Waals CuCrP2S6 Layers

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3