Abstract:A WS2/CuInP2S6 heterostructure is fabricated in such a way that screening charges of opposite signs are supplied to WS2 monolayers by the residual polarization of ferroelectric CuInP2S6 regions with antiparallel orientations. This significantly modifies the proportion of negatively charged trions to neutral excitons in the direct‐gap semiconductor's recombination luminescence, providing a feasible method for non‐volatile, controlled modulation in 2D systems. The integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6 (Adv. Mater. 38/2023)

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub> (Adv. Mater. 38/2023)

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub>

Two‐Dimensional Ferroionics: Conductive Switching Mechanisms And Transition Boundaries in Van Der Waals Layered Material CuInP2S6

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP 2 S 6 Heterostructure

Room-temperature Ferroelectricity in CuInP2S6 Ultrathin Flakes

Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Two-dimensional Ferromagnetism and Driven Ferroelectricity in Van Der Waals CuCrP2S6

Unconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

Room-temperature Stable Two-Dimensional Ferroelectric Materials: CuInS2P6 and Heterostructures

Switchable diode effect in 2D van der Waals ferroelectric CuCrP2S6

Anomalous polarization switching and permanent retention in a ferroelectric ionic conductor

Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure

Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP$_2$S$_6$

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Thickness-Dependent In-Plane Polarization and Structural Phase Transition in Van Der Waals Ferroelectric CuInP2 S6.

Electrostatic Coupling in MoS2/CuInP2S6 Ferroelectric vdW Heterostructures