Abstract:Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.

Study of Ferroelectic Properties in Ferroelectric/High-K Dielectric Bilayers

Effects of Thickness on the Polarization States in Epitaxial Ferroelectric Thin Films

Disappearance of Ferroelectric Critical Thickness in Epitaxial Ultrathin Bazro3 Films

Studies Of Switching Kinetics In Ferroelectric Thin Films

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Effect Of Strain And Deadlayer On The Polarization Switching Of Ferroelectric Thin Film

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

Size Effect and Fatigue Mechanism in Ferroelectric Thin Films

Measurement of Nonlinear Current–Voltage Dependence of Interfacial Passive Layers for Ferroelectric Thin Films

Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Ultrathin Limit And Dead-Layer Effects In Local Polarization Switching Of Bifeo3

Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

The Inlaid Al<sub>2</sub>O<sub>3</sub>Tunnel Switch for Ultrathin Ferroelectric Films

Polarization–electric Field Relations of Ferroelectric/antiferroelectric Layered Ceramics in Pb(Nb, Zr, Sn, Ti)O3 System

Ferroelectric Phase Stabilization Within Antiferroelectric/Dielectric Stacking Layers

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Estimation of Film-Electrode Contact Resistance and Domain Switching Time from Ferroelectric Polarization-Voltage Hysteresis Loops