Abstract:Utilization of the switchable spontaneous polarization of ferroelectric materials offers a promising avenue for the future of nanoelectronic memories and logic devices provided that nanoscale metal-ferroelectric-metal heterostructures can be engineered to maintain a bi-stable polarization switchable by an applied electric field. The most challenging aspect of this approach is to overcome the deleterious interface effects which tend to render ferroelectric polarization either unstable or unswitchable and which become ever more important as ferroelectric materials are produced thinner and thinner. Here we use first-principles density functional calculations and phenomenological modeling to demonstrate that a BaO/RuO2 interface termination sequence in SrRuO3/BaTiO3/SrRuO3 epitaxial heterostructures grown on SrTiO3 can lead to a nonswitchable polarization state for thin BaTiO3 films due to a fixed interface dipole. The unfavorable interface dipole at the BaO/RuO2 interface leads to a strong preference for one polarization state and, in thin film structures, leads to instability of the second state below a certain critical thickness, thereby making the polarization unswitchable. We analyze the contribution of this interface dipole to the energetic stability of these heterostructures. Furthermore, we propose and demonstrate that this unfavorable interface dipole effect can be alleviated by deposition of a thin layer of SrTiO3 at the BaO/RuO2 terminated interface. Our first-principles and phenomenological modeling predict that the associated change of the interface termination sequence to SrO/TiO2 on both sides of the heterostructure leads to a restoration of bi-stability with a smaller critical thickness, along with an enhancement of the barrier for polarization reversal. These results demonstrate that interface engineering is a viable approach to enhance ferroelectric properties at the nanoscale.

Ferroelectric Phase Stabilization Within Antiferroelectric/Dielectric Stacking Layers

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Mimicking Antiferroelectrics with Ferroelectric Superlattices

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures

Stacking Selected Polarization Switching and Phase Transition in Vdw Ferroelectric Α-In2se3 Junction Devices

Study of Ferroelectic Properties in Ferroelectric/High-K Dielectric Bilayers

Enhancement of Ferroelectric Polarization Stability by Interface Engineering.

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

A high-energy density antiferroelectric made by interfacial electrostatic engineering

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Giant shape memory and domain memory effects in antiferroelectric single crystals

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

Reversible and High-Temperature-Stabilized Strain in (Pb,La)(Zr,Sn,Ti)O3 Antiferroelectric Ceramics