Abstract:A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that the local structure deviates from the average structure in both ferroelectric and paraelectric phases. We show that the crystal possesses several, inequivalent complex domain boundaries which show no sign of instability even 200 K above the ferroelectric-to-paraelectric phase transition temperature TC. Two types of boundaries are addressed. The first boundary was formed between ferroelectric domains below TC. This boundary remained stable up to the highest measurement temperatures, and stabilized the domains so that they had the same orientation after repeated heating and cooling cycles. These domains transformed normally to the cubic paraelectric phase. Another type of boundary was formed at 673 K and exhibited no signs of instability up to 923 K. The boundary formation was reversible: it formed and vanished between 573 and 673 K during heating and cooling, respectively. A model in which the crystal is divided into thin slices with different Zr/Ti ratios is proposed. The physical mechanism behind the thermal-stress-induced structural changes is related to the different thermal expansion of the slices, which forces the domain to grow similarly after each heating and cooling cycle. The results are interesting for non-volatile memory development, as it implies that the original ferroelectric state can be restored after the material has been transformed to the paraelectric phase. It also suggests that a low-symmetry structure, stable up to high-temperatures, can be prepared through controlled deposition of layers with desired compositions.

Giant shape memory and domain memory effects in antiferroelectric single crystals

Memory effect in antiferroelectrics: A systematic analysis on various electric hysteresis loops

Large Field-Induced Strain, Giant Strain Memory Effect, and High Thermal Stability Energy Storage in (pb,la)(zr,sn,ti)o3 Antiferroelectric Single Crystal

Large Electrostrain Induced by Reversible Domain Switching in Ordered Ferroelectric Nanostructures with Optimized Geometric Configurations

Effect of memory behavior on electric-field-induced phase transition and electrocaloric response in antiferroelectric ceramics

Phase Coexistence and Broad Depolarization Response in (Pb,la)(zr,sn,ti)o-3 Single Crystals

Relaxor Ferroelectric Characteristics And Temperature-Dependent Domain Structure In A (110)-Cut (Pbmg1/3nb2/3o3)(0.75)(Pbtio3)(0.25) Single Crystal

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Electric Field Induced Phase Transition and Domain Structure Evolution in (pb, La)(Zr, Sn, Ti)O3 Single Crystal

Giant electrocaloric effect at the antiferroelectric-to-ferroelectric phase boundary in PbZrTiO$_3$

Oxygen-vacancy-induced Memory Effect and Large Recoverable Strain in a Barium Titanate Single Crystal

Giant Anhysteretic Response of Ferroelectric Solid Solutions with Morphotropic Boundaries: the Role of Polar Anisotropy

Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching

Antiferroelectric Phase Diagram Enhancing Energy-Storage Performance by Phase-Field Simulations

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric materials

Electric Field Induced Metastable Ferroelectric Phase And Its Behavior In (Pb, La)(Zr, Sn, Ti)O-3 Antiferroelectric Single Crystal Near Morphotropic Phase Boundary

Direct observations of electric-field-induced domain switching and phase transition in 0.95Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>-0.05BaTiO<sub>3</sub > single crystals using in situ transmission electron microscopy

Ferroelectric thin films and electrodes for random access memories