Abstract:Utilization of the switchable spontaneous polarization of ferroelectric materials offers a promising avenue for the future of nanoelectronic memories and logic devices provided that nanoscale metal-ferroelectric-metal heterostructures can be engineered to maintain a bi-stable polarization switchable by an applied electric field. The most challenging aspect of this approach is to overcome the deleterious interface effects which tend to render ferroelectric polarization either unstable or unswitchable and which become ever more important as ferroelectric materials are produced thinner and thinner. Here we use first-principles density functional calculations and phenomenological modeling to demonstrate that a BaO/RuO2 interface termination sequence in SrRuO3/BaTiO3/SrRuO3 epitaxial heterostructures grown on SrTiO3 can lead to a nonswitchable polarization state for thin BaTiO3 films due to a fixed interface dipole. The unfavorable interface dipole at the BaO/RuO2 interface leads to a strong preference for one polarization state and, in thin film structures, leads to instability of the second state below a certain critical thickness, thereby making the polarization unswitchable. We analyze the contribution of this interface dipole to the energetic stability of these heterostructures. Furthermore, we propose and demonstrate that this unfavorable interface dipole effect can be alleviated by deposition of a thin layer of SrTiO3 at the BaO/RuO2 terminated interface. Our first-principles and phenomenological modeling predict that the associated change of the interface termination sequence to SrO/TiO2 on both sides of the heterostructure leads to a restoration of bi-stability with a smaller critical thickness, along with an enhancement of the barrier for polarization reversal. These results demonstrate that interface engineering is a viable approach to enhance ferroelectric properties at the nanoscale.

Enhancement of Ferroelectric Polarization Stability by Interface Engineering.

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Interface Control Of Bulk Ferroelectric Polarization

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

PHASE FIELD STUDY OF POLARIZATION VORTEX IN FERROELECTRIC NANOSTRUCTURES

Enhancement of Interfacial Polarization in BaTiO 3 Thin Films via Oxygen Inhomogeneity

Giant Ferroelectric Polarization in Ultrathin Ferroelectrics Via Boundary-Condition Engineering

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O<sub>3</sub>/LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O 3 /LaAlO 3 /SrTiO 3 Heterostructures.

Interface engineering in ferroelectrics: From films to bulks

Colossal electrocaloric effect in an interface-augmented ferroelectric polymer

Stabilization of Polar Nano Regions in Pb-free ferroelectrics

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Mechanical-electrical-chemical coupling study on the stabilization of a hafnia-based ferroelectric phase

Giant Enhancement In The Ferroelectric Field Effect Using A Polarization Gradient

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

Engineering of multiferroic BiFeO3 grain boundaries with head-to-head polarization configurations

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Photo-induced stabilization and enhancement of the ferroelectric polarization in Ba$_{0.1}$Sr$_{0.9}$TiO$_{3}$/La$_{0.7}$Ca(Sr)$_{0.3}$MnO$_{3}$ thin film heterostructures