Engineering of multiferroic BiFeO3 grain boundaries with head-to-head polarization configurations

Mingqiang Li,Shuzhen Yang,Ruochen Shi,Linglong Li,Ruixue Zhu,Xiaomei Li,Yang Cheng,Xiumei Ma,Jingmin Zhang,Kaihui Liu,Pu Yu,Peng Gao
DOI: https://doi.org/10.1016/j.scib.2020.12.032
IF: 18.9
2021-04-01
Science Bulletin
Abstract:<p>Confined low dimensional charges with high density such as two-dimensional electron gas (2DEG) at interfaces and charged domain walls in ferroelectrics show great potential to serve as functional elements in future nanoelectronics. However, stabilization and control of low dimensional charges is challenging, as they are usually subject to enormous depolarization fields. Here, we demonstrate a viable method to fabricate tunable charged interfaces with ∼77°, 86° and 94° head-to-head polarization configurations in multiferroic BiFeO<sub>3</sub> thin films by grain boundary engineering. The adjacent grains are cohesively bonded. The charged grain boundary is about 1 nm in width and devoid of any amorphous region. Remarkably, the polarization remains unchanged near the charged grain boundaries, indicating the bound polarization charges are well compensated, i.e., there should be two-dimensional charge gas confined in the grain boundaries. Adjusting the tilt angle of the grain boundaries enables tuning of the polarization configuration from 71° to 109°, which in turn allows for control of charge density. This general and feasible method to obtain tunable grain boundaries in multiferroics opens new doors for the development of advanced applications in next generation nanoelectronics.</p>
multidisciplinary sciences
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