Theoretical analysis of distributions of the peak field and breakdown voltage along the metallurgical junction edge based on an elliptic cylindrical solution

Jin He,Xing Zhang,Ru Huang,Yang Yuan Wang
DOI: https://doi.org/10.1016/S0038-1101(01)00007-7
IF: 1.916
2001-01-01
Solid-State Electronics
Abstract:The distributions of the peak electrical field at breakdown and breakdown voltage along the metallurgical junction edge of curved junction have been analyzed theoretically in this paper for the first time, based on an elliptical cylindrical geometrical approximation solution of the curved-abrupt junction. The effects of the ratio of lateral junction depth to that of the vertical, normalized radius of curvature of the metallurgical junction and location angle around the metallurgical junction edge on the distributions of the breakdown voltage and peak electrical field have been examined. In an extreme case, the elliptical–cylindrical solution reduces to the classic cylindrical-symmetric solution. All analytical results have been well verified by the numerical analysis performed by the semiconductor device simulator DESSIS-ISE, showing the validity of the elliptic approximate solution of the planar curved-abrupt junction.
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