Abstract:The two-dimensional numerical simulator BAMBI has been modified to simulate reverse biased P-N junction characteristics. Complete I-V characteristics of the reverse biased P-N junction is obtained to predict the breakdown voltage rather than the ionization integral. Simulations are then applied to the field limiting ring (FLR) structure and the reduced surface field (RESURF) structure. A quasi-three-dimensional approach is used to simulate cylindrically symmetric P-N junctions to model the three-dimensional effects due to lateral curvature at corners of mask patterns. A resistive contact to the FLR is used to stabilize the numerical solution of floating FLRs. Simulation results suggest that the breakdown voltage of devices with smaller radii at the rounded corner are much lower as compared to predictions from two-dimensional simulation. In the case of the FLR and RESURF structures, three-dimensional effects play an important role in determining optimal design parameters.

A New Quasi 2-Dimensional Analytical Approach to Predicting RingJunction Voltage,Edge Peak Fields and Optimal Spacing of PlanarJunction with Single Floating Field Limiting Ring Structure

Analytical Model of Three-Dimensional Effect on Voltage and Edge Peak Field Distributions and Optimal Space for Planar Junction with a Single Field Limiting Ring

A Concise Analytical Approach For Predicting The Voltage And Edge Peak Field Profiles Of The Planar Junction With A Single Floating Field Limiting Ring

A New Analytic Method to Design Multiple Floating Field Limiting Rings of Power Devices

Analytical Solutions for Breakdown Voltage and Electric Field Distribution along Junction Edge for Planar Abrupt Junction

Theoretical analysis of distributions of the peak field and breakdown voltage along the metallurgical junction edge based on an elliptic cylindrical solution

2-Dimensional Analysis of Surface Electric Field Profile of Planar Junction with Single-Step Field-Plate Termination Structure

Optimization of Specific ON-Resistance of Superjunction Device with Two-Zones Variation Vertical Doping Profile

Electric Field Distribution in Charge Imbalance Super Junction

Equivalent Doping Transformation Method for Predicting Breakdown Voltage and Peak Field at Breakdown of Epitaxial-Diffused Punch-Through Junction

Equivalent Junction Transformation: A Semi-Empirical Analytical Method For Predicting The Breakdown Characteristics Of Cylindrical- And Spherical-Abrupt Pn Junctions

Simulation of reverse breakdown in planar P-N junctions

An Analytical Model of the Electric Field Distributions of Buried Superjunction Devices

An analytical model for electric field distribution of positively beveled abrupt PN junctions

A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P–N junction terminated with finite field plate

An Analytical Model for the 3D-RESURF Effect

Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions

Characteristic and Robustness of Trench Floating Limiting Rings for 4H-SiC Junction Barrier Schottky Rectifiers

An Analytical Model and New Structure of SOI High Voltage Devices with Compound Dielectric Layer

An Analytical Approach of Field Profile of P-N Junction

Analytical model of reverse breakdown voltage for 4H-SiC super junction structure