Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

Fabrication of high hole-carrier density p-type ZnO thin films by N–Al co-doping

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

p-Type conduction in Al–N co-doped ZnO films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Preparation of P-Type ZnO Films by Al+N-codoping Method

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Electrical Properties of Al+N Co-doped p-type ZnO Films

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Effects of Growth Ambient on Electrical Properties of Al–N Co-Doped P-Type ZnO Films

Effect of Substrate Temperature on Structural, Electrical and Optical Properties of Al-N Co-Doped Zno Thin Films

Al-Doping Effects on Structure, Electrical and Optical Properties of C-Axis-Orientated Zno : Al Thin Films