Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing

Nickel Induced Crystallization of Amorphous Silicon Thin Films

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Investigation of Grain Formation and Growth in Nickel-Induced Lateral Crystallization Process

Ni-Induced Lateral Crystallization of Amorphous Silicon Thin Films and Its Characterization

Study on Nickel-Induced Crystallization of Amorphous Silicon Thin Films

The Growth of Polysilicon Formed by Metal-induced Lateral Crystallization of Amorphous Silicon

Recombination behavior of nickel in cast multicrystalline silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Research on Nickel Induced Silicon Nanocrystal Growth

Low Temperature Polycrystalline Silicon Film Formation by Metal Induced Crystallization with Nickel Salt Derived by Ultrasonic Spray Pyrolysis

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Study On The Crystallization Process Of Ni-P Amorphous Alloy

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Preparation of Polycrystalline Silicon of 100μm Size Large Grain Thin Films by Metal Induced Crystallization

Growth of Nickel Films on the Surface of Silicon Nanowire

Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films