Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

The Growth of Polysilicon Formed by Metal-induced Lateral Crystallization of Amorphous Silicon

Mechanism of Metal Induced Lateral Crystallization

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film Transistors

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Aluminum-Induced Crystallization Of Pecvd Amorphous Silicon At 120 Degrees C

Study on Nickel-Induced Crystallization of Amorphous Silicon Thin Films

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Aluminum-Induced Crystallization of PECVD Amorphous Silicon at 120°C

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Doping effect on the metal-induced lateral crystallization rate

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

The Crystallization of Cr–Si–Ni–Al Amorphous Films—nucleation and Growth of Intermetallic Phase Cr(Al,Si)2

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature